ty semiconductor reliability handbook (?handling SSM3J15FU ? small package ? low on resistance : r on = 12 (max) (@v gs = ? 4 v) : r on = 32 (max) (@v gs = ? 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ? 30 v gate-source voltage v gss 20 v dc i d ? 100 drain current pulse i dp ? 200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the precautions?/?derating concept and met hods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 0.006g(typ.) d q 1 2 3 12 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 ? 30 ? ? v drain cut-off current i dss v ds = ? 30 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ? 3 v, i d = ? 0.1 ma ? 1.1 ? ? 1.7 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ? 10 ma 20 ? ? ms i d = ? 10 ma, v gs = ? 4 v ? 8 12 drain-source on resistance r ds (on) i d = ? 1 ma, v gs = ? 2.5 v ? 14 32 input capacitance c iss ? 9.1 ? pf reverse transfer capacitance c rss ? 3.5 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0, f = 1 mhz ? 8.6 ? pf turn-on time t on ? 65 ? switching time turn-off time t off v dd = ? 5 v, i d = ? 10 ma, v gs = 0~ ? 5 v ? 175 ? ns switching time test circuit precaution v th can be expressed as voltage between gate and source when low operating current value is i d = ? 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration for using the device. v dd = ? 5 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 5v 10 s v dd out 50 r l (c) v out t on 90% 10% ? 5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com SSM3J15FU smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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